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Ordering number : ENN6497A
Monolithic Digital IC
LB11975
High-Speed CD-ROM Spindle Motor Driver IC
Overview
The LB11975 is a monolithic bipolar IC developed for uses as a spindle motor driver for high-speed CD-ROM and DVD-ROM drives. To minimize heat generation during high-speed rotation and braking, the LB11975 adopts direct PWM drive in the output stage. During reverse braking the upper and lower side output transistors are both driven in PWM mode to implement dual PWM controlled braking. The device thus controls the current to remain under a limit value and prevent rapid heat generation. This prevents device destruction due to rapid heating. The absolute maximum voltage rating is 27 V, and the maximum current is 2.5 A.
Package Dimensions
unit: mm 3251-HSOP36R
[LB11975]
17.8 (6.2)
36
19
(4.9) 7.9
(0.5) 2.25
0.8
2.0
0.3
Functions and Features
* * * * * * * * * * Direct PWM drive (lower side control) Built-in upper and lower side output diodes Supports the use 3.3 V DSP devices. Power saving function for standby mode Hall FG output (1 or 3 Hall device operation) Built-in Hall device power supply Reverse rotation detection output and drive cutoff circuit Voltage control amplifier Current limiter circuit Thermal protection circuit
2.45max
0.1
2.7
SANYO: HSOP36R
Allowable power dissipation, Pd max -- W
Pd max -- Ta
2.4 2.1 2.0
Mounted on the specified printed circuit (114.3 x 76.1 x 1.6 mm3 glass epoxy board)
1.6 1.26
1.2
Independent IC
0.9 0.8 0.54 0.4
0 -20
0
20
40
60
80
100
Ambient temperature, Ta -- C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11201RM (OT) No. 6497-1/12
0.65
1
18
10.5
0.25
LB11975
Specifications
Maximum Ratings at Ta = 25C
Parameter Supply voltage 1 Supply voltage 2 Supply voltage 3 Output current Output applied voltage Allowable power dissipation 1 Allowable power dissipation 2 Operating temperature Storage temperature Symbol VCC1 max VCC2 max VCC3 max IO max VIN max Pd max1 Pd max2 Topr Tstg Independent IC Mounted on the specified circuit board (114.3 x 76.1 x 1.6 mm3 glass epoxy board) Conditions Ratings 7 27 27 2.5 30 0.9 2.1 -20 to +75 -55 to +150 Unit V V V A V W W C C
Allowable Operating Ranges at Ta = 25C
Parameter Power-supply voltage range 1 Power-supply voltage range 2 Power-supply voltage range 3 FG pin applied voltage FG pin output current Symbol VCC1 VCC2 VCC3 VFG IFG VCC2 VCC1 Conditions Ratings 4 to 6 4 to 16 4 to 16 0 to VCC1 0 to 4.0 Unit V V V V mA
Electrical Characteristics at Ta = 25C, VCC1 = 5 V, VCC2 = VS = 12 V
Parameter Symbol ICC1-1 ICC1-2 ICC2-1 ICC2-2 ICC3-1 ICC3-2 VCTL = VCREF VS/S = 0 V VCTL = VCREF VS/S = 0 V VCTL = VCREF VS/S = 0 V 5.0 Conditions Ratings min 5.0 typ 8.0 0 6.5 0 0.3 0 max 11.0 200 8.0 200 0.7 200 Unit mA A mA A mA A
Supply current 1
Supply current 2
Supply current 3 [Output Block] Output saturation voltage 1
VOsat1(L) IO = 0.5 A, VO(sink), VCC1 = 5 V, VCC2 = VCC3 = 12 V VOsat1(H) IO = 0.5 A, VO(source), VCC1 = 5 V, VCC2 = VCC3 = 12 V VOsat2(L) IO = 1.5 A, VO(sink), VCC1 = 5 V, VCC2 = VCC3 = 12 V VOsat2(H) IO = 1.5 A, VO(source), VCC1 = 5 V, VCC2 = VCC3 = 12 V IOleak(L) IOleak(H) VFH VFL IHB VICM VHIN VIN(HA) VSLH VSLL T-TSD TSD Design target value (junction temperature) * Design target value (junction temperature) * Upper side diode, IO = 2.0 A Lower side diode, IO = 2.0 A -4 1.5 60 23 6 -25 -100
0.15 0.80 0.40 1.10
0.25 0.95 0.60 1.30 100
V V V V A A
Output saturation voltage 2
Output leakage current
Diode forward voltage [Hall Amplifier Block] Input bias current Common-mode input voltage range Hall input sensitivity Hysteresis Input voltage: low high Input voltage: high low [Thermal Protection Circuit] Operating temperature Hysteresis
1.50 1.50
2.00 2.00
V V
-1 VCC - 1.5 32 16 -16 39 25 -6
A V mVp-p mV mV mV
150
180 40
210
C C
Note: * These are design target values and are not tested.
Continued on next page.
No. 6497-2/12
LB11975
Continued from preceding page.
Parameter [PWM Oscillator] High-level output voltage Low-level output voltage Amplitude Oscillator frequency Charge current Charge resistor value [CTL Amplifier] VCTL pin input current VCREF pin input current Forward rotation gain Reverse rotation gain Forward rotation limiter voltage Reverse rotation limiter voltage Startup voltage Dead zone [FG Pin] (speed pulse output) Low-level output voltage Pull-up resistor value [RS Pin] Low-level output voltage Pull-up resistor value [Stop/Start Pin] Low-level input voltage High-level input voltage Low-level input current High-level input current [Hall Device Power Supply] Hall device supply voltage Allowable current VH IH IH = 5 mA 0.65 0.85 1.05 20 V mA VSSL VSSH ISSL ISSH VSS = 0 V VSS = 5.0 V 2.0 -1 0 50 200 0 0.7 VCC1 V V A A VRSL RRS IRS = 2 mA 7.5 10 0.4 12.5 V k VFGL RFG IFG = 2 mA 7.5 10 0.4 12.5 V k IVCTL IVCREF GDF+ GDF- VRF1 VRF2 VCTH VDZ VCREF = 1.65 V. Design target value * VCREF = 1.65 V. Design target value * VCTL = VCREF = 1.65 V VCTL = VCREF = 1.65 V Design target value * Design target value * -2 -2 0.20 -0.30 0.26 0.26 1.50 35 80 0.25 -0.25 0.29 0.29 0.30 -0.20 0.32 0.32 1.80 140 A A times times V V V mV VOH(OSC) VOL(OSC) V(OSC) f(OSC) ICHG RDCHG C = 2200 pF -110 1.6 3.1 1.4 1.5 3.3 1.6 1.7 23.0 -94 2.1 -83 2.6 3.5 1.8 1.9 V V Vp-p kHz A k Symbol Conditions Ratings min typ max Unit
Note: * These are design target values and are not tested.
Truth Table
Input IN1 1 H IN2 L IN3 H H L H L H L H L H L H L Control voltage VCTL Output Source Sink OUT2 OUT1 OUT1 OUT2 OUT3 OUT1 OUT1 OUT3 OUT3 OUT2 OUT2 OUT3 OUT1 OUT2 OUT2 OUT1 OUT1 OUT3 OUT3 OUT1 OUT2 OUT3 OUT3 OUT2 FG output FG1 L FG2 H
2
H
L
L
L
L
3
H
H
L
L
H
4
L
H
L
H
L
5
L
H
H
H
H
6
L
L
H
H
L
FG1 FG2
No. 6497-3/12
Block Diagram
S/S 15 27
VH 16
VCC1
TSD
S/S
HALL BIAS 8
(29) VCC3
9 VCC2 28 Rf
IN1+ 23
IN1- 22
IN2+ 21 MATRIX & LOGIC
LB11975
IN2- 20
35
IN3+ 19
(36) OUT1 (2) 1 OUT2 (4) 3 OUT3
IN3- 18 6 CURR LIM VCC3 (7, 30, 31) GND2
Rotation direction detection 17 GND1 OSC
26 FG1
25 FG2
24 RS
10 PWM
11 FC
12 PH
13 14 VCREF VCTL
A13185
No. 6497-4/12
LB11975 Pin Assignment
1 2 3 4 5 6 7 8 9
OUT2 OUT2 OUT3 OUT3 NC GND2 GND2 VCC3 VCC2
OUT1 36 OUT1 35 NC 34 NC 33 NC 32 GND2 31 GND2 30 VCC3 29
LB11975
RF 28
FR FRAME GND 10 PWM 11 FC 12 PH 13 VCREF 14 VCTL 15 S/S 16 VH 17 GND1 18 IN3-
FRAME FR GND VCC1 27 FG1 26 FG2 25 RS 24 IN1+ 23 IN1- 22 IN2+ 21 IN2- 20 IN3+ 19
Top view
No. 6497-5/12
S/S 15
VH 16
VCC1 27
Sample Application Circuit
TSD
S/S
HALL BIAS
8
VCC3 VCC2 9
C 28
IN1+
23
Rf
0.01F
H
IN1-
22
IN2+ MATRIX & LOGIC
21
0.01F
H
20 IN2-
35 1 3
OUT1
LB11975
OUT2 OUT3
IN3+
19
0.01F 6 CURR LIM VCC3 GND2
H
IN3-
18
VCC1
10kx3
Rotation direction detection 17 OSC
GND1
26 FG1
25 FG2
24 RS
10 PWM 2200pF
11 FC 0.01F
12 PH
14 VCTL
13 VCREF 1.65V
No. 6497-6/12
A13186
LB11975 Pin Functions
Pin No. 9 8 29 27 Pin VCC2 VCC3 Pin voltage 4 V to 16 V 4 V to 16 V Function Supplies the source side pre-drive voltage. Supplies the motor drive voltage. Supply voltage for all circuits other than the output transistors and the source side pre-drive voltage Reverse rotation detection High-level output: Forward rotation Low-level output: Reverse rotation Single Hall device waveform Schmitt comparator synthesized output Equivalent circuit
VCC1
4 V to 16 V
24
RS
VCC 1 10k
24 25 26
26
FG1
25
FG2
Three Hall device waveform Schmitt comparator synthesized output
23 22 21 20 19 18
IN1+ IN1- IN2+ IN2- IN3+ IN3-
U phase Hall device input. Logic high refers to the state where IN1+ > IN1-.
VCC 1
1.5 V to VCC1 - 1.5 V
V phase Hall device input. Logic high refers to the state where IN2+ > IN2-.
19 21 23
500
500
18 20 22
W phase Hall device input. Logic high refers to the state where IN3+ > IN3-.
VCC1
16
16 VH Provides the Hall device lower side bias voltage.
30k 2k
VCC1
All circuits can be set to the non-operating state by setting this pin to 0.7 V or under, or by setting it to the open state. This pin must be held at 2 V or higher.
75k
15
S/S
0 V to VCC1
15
50k
17
GND1
Ground for all circuits except the output
Continued on next page.
No. 6497-7/12
LB11975
Continued from preceding page.
Pin No. Pin Pin voltage Function Control loop frequency characteristics correction 11 FC Closed loop oscillation in the current control system can be stopped by connecting a capacitor between this pin and ground. Equivalent circuit
VCC 1
11
500 500
10
500 2k
10
PWM
PWM oscillator capacitor connection
65k
13
VCREF
0 V to VCC1 - 1.5 V
Control reference voltage input The control start voltage is determined by this voltage.
VCC 1
Speed control voltage input This IC implements a voltage control system in which VC > VCREF means forward rotation and VC < VCREF means slow foward rotation. (This IC includes reverse rotation prevention circuit, so reverse rotation will not occur.) 3, 4 6, 7 30, 31 1, 2 35, 36 OUT3 GND2 OUT2 OUT1 W phase output Ground for the output transistors V phase output U phase output
500
500
14
VCTL
0 V to VCC1 - 1.5 V
14
13
VCC1
VCC3
VCC2
28
2k
Upper side npn transistor collector (shared by all three phases) 28 RF Connect a resistor between VCC3 and the RF pin for current detection. The fixed current control system and the current limiter operate by detecting this voltage.
1
2k
23 35 36 7
4
6
30 31
VCC1
Peak hold circuit capacitor connection. 12 PH Connect a capacitor to this pin to smooth the voltage detected by the resistor RF.
12
300 11k
No. 6497-8/12
LB11975 Torque Command Figure 1 shows the relationship between the control voltage (VCTL) and the RF voltage.
Forward rotation
VRF Dead zone
Offset voltage
3mV 1.65V
VCREF=1.65V VCTL
Figure 1 Truth Table
Operation VCTL > VCREF VCREF > VCTL Forward rotation Reverse torque braking *
Note: * Since this IC includes a reverse rotation prevention circuit, although the IC will brake the motor if the motor is rotating and VCTL < VCREF, when reverse rotation is detected, the IC will turn the output off, thus stopping motor rotation.
Reverse Rotation Detection Circuit Truth Table
RS pin Forward rotation Reverse rotation HIGH LOW
D IN1+ CK IN1- R Q OUT During forward rotation: The OUT signal is set high to reset DFF.
D IN2+ CK IN2- R Q
During reverse rotation: Reverse rotation is detected when the Hall comparator output falls. At that point the OUT signal is set to the low level.
D IN3+ CK IN3- VCTL VCREF R Q
Figure 2 Reverse Rotation Detection Circuit Block Diagram
No. 6497-9/12
LB11975
Hall comparator IN1 (IN1, IN2, and IN3) waveforms
IN2
IN3
Reverse rotation is detected with this timing.
Figure 3 Reverse Rotation Timing Chart Overview of Reverse Torque Braking (This circuit uses a direct PWM drive technique and allows the current limiter to operate during reverse torque braking.) In earlier direct PWM motor drivers, speed control was implemented by applying PWM to only one (either the upper or lower) output transistor. With this type of driver, the regenerative current formed during reverse torque braking operated as a short-circuit braking. As a result problems such as the coil current exceeding the limit value and IOmax being exceeded, would occur. To prevent these problems, the LB11975 switches both the upper and lower side output transistors during reverse torque braking to suppress the generation of overcurrents due to regenerative currents when the PWM is off and allows the optimal design of drive currents. Supplementary Documentation Coil current during reverse torque braking (1) Earlier ICs, with the lower side transistor was switched and the upper side transistor used for current detection (RF) During reverse torque braking, when the coil current increases and the limit is reached, the lower side output transistor is turned off. At this time the regenerative current flows through the upper side transistor. The circuit path is as follows: Coil upper side diode VCC RF upper side transistor coil During regeneration, the upper side transistor is on and the back EMF that occurs at the upper side transistor's emitter pin has a low potential, and since the upper side transistor is fully on at that point, the circuit functions as short-circuit braking. Even if the regenerative current results in the RF voltage reaching the limit voltage, since the upper side transistor cannot be turned off, the limit circuit will not operate and a coil current in excess of IOmax may occur. (2) Earlier ICs, with the upper side transistor was switched and the upper side transistor used for current detection (RF) During reverse torque braking, when the coil current increases and the limit is reached, the upper side output transistor is turned off. At this time the regenerative current flows through the lower side transistor. The circuit path is as follows: Coil lower side transistor ground lower side diode coil During regeneration, the lower side transistor is on and the back EMF that occurs at the lower side transistor's collector pin has a high potential, and since the lower side transistor is fully on at that point, the circuit functions as short-circuit braking. Since the regenerative current does not flow through the RF pin, the current limiter circuit does not operate, and a current in excess of IOmax may occur in the lower side transistor.
No. 6497-10/12
LB11975 (3) When both the upper and lower side transistors are switched and current detection (RF) is performed in the upper side transistor During reverse torque braking, when the coil current increases and the limit is reached, both the upper and lower side transistors are turned off. The motor current circuit path at this point is as follows: Coil upper side diode VCC power supply line capacitor ground lower side diode coil When the limiter circuit operates, both the upper and lower side transistors are turned off, so short-circuit breaking does not occur, and coil current attenuation is all that occurs. Thus this technique allows current control at the set (limiter) current to be performed even during reverse torque braking.
Regenerative Current Path
RF + -
A13187
Drive Mode
No. 6497-11/12
LB11975 Braking Mode
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. PS No. 6497-12/12

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